Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching
نویسندگان
چکیده
The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.
منابع مشابه
Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
متن کاملOrdered arrays of nanoporous silicon nanopillars and silicon nanopillars with nanoporous shells
The fabrication of ordered arrays of nanoporous Si nanopillars with and without nanoporous base and ordered arrays of Si nanopillars with nanoporous shells are presented. The fabrication route is using a combination of substrate conformal imprint lithography and metal-assisted chemical etching. The metal-assisted chemical etching is performed in solutions with different [HF]/[H2O2 + HF] ratios....
متن کاملExploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching.
Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.
متن کاملPorosity control in metal-assisted chemical etching of degenerately doped silicon nanowires.
We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in pro...
متن کاملFormation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching
The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involvin...
متن کامل